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  Datasheet File OCR Text:
 Ordering number : ENN6793
CPH5504
NPN Epitaxial Planar Silicon Transistor
CPH5504
High-Current Switching Applications
Applications
*
Package Dimensions
unit : mm 2162
2.9
DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.
[CPH5504]
3
0.6 0.2
0.05 0.15
Features
*
5
4
*
*
Composite type with 2 NPN transistors in one package facilitating high-density mounting. The CPH5504 is composed of 2 chips each equivaient to the CPH3205. Ultrasmall-sized package facilitates miniaturization in end products. (mounting height : 0.9mm)
1
0.95
2
0.4
0.6
1.6
2.8
1 : Collector(TR1) 2 : Collector(TR2) 3 : Base(TR2) 4 : Emitter Common 5 : Base(TR1) SANYO : CPH5
0.2
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC PT Tj Tstg Conditions
0.4
0.7
0.9
Ratings 80 80 50 6 3 6 600 0.9 1.2 150 -55 to +15
Mounted on a ceramic board (600mm2!0.8mm) Mounted on a ceramic board (600mm2!0.8mm)
Unit V V V V A A mA W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=3A VCE=10V, IC=500mA VCB=10V, f=1MHz Ratings min typ max 1 1 560 380 13 Unit A A
200 70
MHz pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21401 TS IM TA-2946 No.6793-1/4 GI IM
CPH5504
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA IC=10A, IE=0 IC=100A, RBE=0 IC=1mA, RBE= IE=10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min typ 80 140 0.88 max 120 210 1.2 Unit mV mV V V V V V ns ns ns
80 80 50 6 35 300 22
Marking : ED
Switching Time Test Circuit
PW=20s D.C.1% INPUT RB VR 50 + 100F + IB1 IB2 OUTPUT
Electrical Connection
B1 EC B2
RL
C1
470F
C2
VBE= -5V VCC=25V 10IB1= -10IB2= IC= 1A
5.0 4.5 4.0
IC -- VCE
100m A
80mA
60mA 40mA
3.0
IC -- VBE
VCE=2V
2.5
Collector Current, IC -- A
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.4 0.8 1.2
Collector Current, IC -- A
2.0
20mA 10mA
1.5
1.0
5.0mA
0.5
IB=0
1.6 2.0 IT02464
0 0 0.2 0.4 0.6 0.8 1.0 IT02465
Collector-to-Emitter Voltage, VCE -- V
1000 7 5
Base-to-Emitter Voltage, VBE -- V
1000
hFE -- IC
VCE=2V
Gain Bandwidth Product, f T -- MHz
f T -- IC
VCE=10V
7 5 3 2
Ta=75C
DC Current Gain, hFE
3 2
--25C 25C
100 7 5 3 2
100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
10 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
IT02466
Collector Current, IC -- A
Ta=75C 25C --25C
IT02467
No.6793-2/4
CPH5504
100 7
Cob -- VCB
f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
1000 7 5 3 2
VCE(sat) -- IC
IC / IB=20
Output Capacitance, Cob -- pF
5 3 2
100 7 5 3 2
10 7 5 3 2 0.1
= Ta
--
75
C
25 C
25
C
2
3
5 7 1.0
2
3
5 7 10
2
3
57 IT02468
10 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector-to-Base Voltage, VCB -- V
1000 7
VCE(sat) -- IC
Collector Current, IC -- A
5
IT02469
VBE(sat) -- IC
IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
5 3 2
3 2
1000 7 5 3 2
100 7 5 3 2
Ta
5 =7
C
Ta= --25C
75C
25C
C C 25 --25
10 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
100 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
10 7 5
IT02470 1.4
ASO
Collector Current, IC -- A
IT02471
PC -- Ta
ICP=6A Collector Dissipation, PC -- W IC=3A
1m s
Collector Current, IC -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01
1.2
10 0 s 50 0
10
DC
10
ms
1.0 0.9 0.8
op
0m
To t
s
er
s
al
ati
on
1u
0.6
Di
ss
nit
ip
ati
on
0.4
Ta=25C Single pulse Mounted on a ceramic board(600mm2!0.8mm) 1unit
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7
0.2 0 0
Mounted on a ceramic board(600mm2!0.8mm)
20 40 60 80 100 120 140 160
0.1
Collector-to-Emitter Voltage, VCE -- V
1.0
IT02472
Ambient Temperature, Ta -- C
IT02473
PC(TR2) -- PC(TR1)
Collector Dissipation, PC(TR2) -- W
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
Mounted on a ceramic board(600mm2!0.8mm)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector Dissipation, PC(TR1) -- W
IT02474
No.6793-3/4
CPH5504
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice.
PS No.6793-4/4


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